Flattening of micro-structured Si surfaces by hydrogen annealing

by: Reiko Hiruta, Hitoshi Kuribayashi, Ryosuke Shimizu, Koichi Sudoh, Hiroshi Iwasaki

Applied Surface Science, Vol. 252, No. 15. (30 May 2006), pp. 5279-5283.

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Abstract

We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 [mu]m deep trenches on Si(0 0 1) substrates after annealing at 1000 [degree sign]C under various H2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H2 pressure to 760 Torr.

@article{citeulike:1961361, abstract = {We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 [mu]m deep trenches on Si(0 0 1) substrates after annealing at 1000 [degree sign]C under various H2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H2 pressure to 760 Torr.}, author = {Hiruta, Reiko and Kuribayashi, Hitoshi and Shimizu, Ryosuke and Sudoh, Koichi and Iwasaki, Hiroshi }, booktitle = {Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13}, citeulike-article-id = {1961361}, doi = {http://dx.doi.org/10.1016/j.apsusc.2005.12.051}, journal = {Applied Surface Science}, keywords = {hydrogen}, month = {May}, number = {15}, pages = {5279--5283}, posted-at = {2007-11-22 20:59:43}, priority = {2}, title = {Flattening of micro-structured Si surfaces by hydrogen annealing}, url = {http://dx.doi.org/10.1016/j.apsusc.2005.12.051}, volume = {252}, year = {2006} }

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TY - JOUR ID - citeulike:1961361 L3 - citeulike-article-id:1961361 TI - Flattening of micro-structured Si surfaces by hydrogen annealing T2 - Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 JF - Applied Surface Science VL - 252 IS - 15 SP - 5279 EP - 5283 N2 - We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 [mu]m deep trenches on Si(0 0 1) substrates after annealing at 1000 [degree sign]C under various H2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H2 pressure to 760 Torr. KW - hydrogen AU - Hiruta, Reiko AU - Kuribayashi, Hitoshi AU - Shimizu, Ryosuke AU - Sudoh, Koichi AU - Iwasaki, Hiroshi PY - 2006/05/30/ UR - http://dx.doi.org/10.1016/j.apsusc.2005.12.051 ER -

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