Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation

@article{citeulike:2836353, abstract = {Two formation methods of nanoparticles distributed at a certain depth in a delta layer by negative ion implantation were investigated. Such delta layer formation of isolated metal nanoparticles is desired in a very thin gate oxide film, with thickness of less than 10 nm for the development of a single electron device using nanoparticles as very small capacitance for Coulomb blockade. We have tried two methods by metal negative ion implantation in a thermally grown SiO2 film on Si substrate and postannealing for (1) a delta layer formation of gold nanoparticles in the surface region of SiO2 film, and for (2) a delta layer formation of silver nanoparticles in the bottom region of SiO2 film. In the former with gold negative ion implantation with a low energy, the depth distribution of nanoparticles formed at annealing at less than 900 °C depended on depth deviation of implanted atoms. The almost delta layer of Au nanoparticles with diameters of 4-8 nm was obtained just under the surface by Au negative ion implantation at 1 keV and annealing at 900 °C. In the latter with silver negative ion implantation at 10 keV, 1×1015 ions/cm2, 25-nm-thick SiO2/Si, and annealing at 700 °C, Ag nanoparticles with a diameter of 6-8 nm were aligned at the same depth in a delta layer in the bottom region of the SiO2 at a distance of 2 nm from the boundary.}, author = {Tsuji, Hiroshi and Arai, Nobutoshi and Matsumoto, Takuya and Ueno, Kazuya and Adachi, Kouichiro and Kotaki, Hiroshi and Gotoh, Yasuhito and Ishikawa, Junzo }, booktitle = {13th International Conference on surface modification of materials by ion beams}, citeulike-article-id = {2836353}, doi = {10.1016/j.surfcoat.2004.08.088}, journal = {Surface and Coatings Technology}, keywords = {physrev}, month = {June}, number = {1-3}, pages = {39--43}, posted-at = {2008-05-27 03:01:44}, priority = {2}, title = {Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation}, url = {http://dx.doi.org/10.1016/j.surfcoat.2004.08.088}, volume = {196}, year = {2005} }

TY - JOUR ID - citeulike:2836353 L3 - citeulike-article-id:2836353 TI - Delta layer formation of silver nanoparticles in thin silicon dioxide film by negative ion implantation T2 - 13th International Conference on surface modification of materials by ion beams JF - Surface and Coatings Technology VL - 196 IS - 1-3 SP - 39 EP - 43 N2 - Two formation methods of nanoparticles distributed at a certain depth in a delta layer by negative ion implantation were investigated. Such delta layer formation of isolated metal nanoparticles is desired in a very thin gate oxide film, with thickness of less than 10 nm for the development of a single electron device using nanoparticles as very small capacitance for Coulomb blockade. We have tried two methods by metal negative ion implantation in a thermally grown SiO2 film on Si substrate and postannealing for (1) a delta layer formation of gold nanoparticles in the surface region of SiO2 film, and for (2) a delta layer formation of silver nanoparticles in the bottom region of SiO2 film. In the former with gold negative ion implantation with a low energy, the depth distribution of nanoparticles formed at annealing at less than 900 °C depended on depth deviation of implanted atoms. The almost delta layer of Au nanoparticles with diameters of 4-8 nm was obtained just under the surface by Au negative ion implantation at 1 keV and annealing at 900 °C. In the latter with silver negative ion implantation at 10 keV, 1×1015 ions/cm2, 25-nm-thick SiO2/Si, and annealing at 700 °C, Ag nanoparticles with a diameter of 6-8 nm were aligned at the same depth in a delta layer in the bottom region of the SiO2 at a distance of 2 nm from the boundary. KW - physrev AU - Tsuji, Hiroshi AU - Arai, Nobutoshi AU - Matsumoto, Takuya AU - Ueno, Kazuya AU - Adachi, Kouichiro AU - Kotaki, Hiroshi AU - Gotoh, Yasuhito AU - Ishikawa, Junzo PY - 2005/06/22/ UR - http://dx.doi.org/10.1016/j.surfcoat.2004.08.088 ER -