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mpickett Sugiyama [9 articles]

最近 mpickett さんのライブラリに追加された論文の中から 著者が Sugiyama. であるものをリストアップしています. You can also see everyone's Sugiyama.
  • Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by Chikako Yoshida, Masaki Kurasawa, Young M Lee, Masaki Aoki, Yoshihiro Sugiyama
    posted to magnesium oxide resistance-switch by mpickett on 2008-04-09 18:19:22 as read
  • Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides
    Jpn J Appl Phys Part 2 Letter, Vol. 45, No. 37-41. (2006)
    posted to nickel oxide resistance-switch titanium by mpickett on 2008-04-08 22:09:11 as read
  • Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model
    Journal of Materials Research, Vol. 23, No. 3. (March 2008), pp. 812-818.
    posted to nickel oxide resistance-switch by mpickett on 2008-04-02 00:48:13 as read
  • New Model Proposed for Switching Mechanism of ReRAM
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st (2006), pp. 84-85.
    posted to oxide resistance-switch titanium by mpickett on 2008-04-01 23:48:27 as read
  • Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International (2007), pp. 767-770.
    posted to nickel oxide resistance-switch by mpickett on 2008-04-01 23:02:15 as read
  • High speed resistive switching in Pt/TiO[sub 2]/TiN film for nonvolatile memory application
    Applied Physics Letters, Vol. 91, No. 22. (2007)
    by Chikako Yoshida, Kohji Tsunoda, Hideyuki Noshiro, Yoshihiro Sugiyama
    posted to oxide resistance-switch titanium by mpickett on 2008-04-01 22:53:13 as read
  • A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM
    Vol. 997 (2007), I07-09.
    by Kentaro Kinoshita, Hideyuki Noshiro, Chikako Yoshida, Yoshihiro Sato, Masaki Aoki, Yoshihiro Sugiyama
    posted to conduction resistance-switch by mpickett on 2008-04-01 22:51:23 as read
  • Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
    Applied Physics Letters, Vol. 90, No. 3. (2007)
    by Yoshihiro Sato, Kentaro Kinoshita, Masaki Aoki, Yoshihiro Sugiyama
    posted to nickel oxide resistance-switch thermal titanium by mpickett on 2008-04-01 22:40:05 as read
  • Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
    Applied Physics Letters, Vol. 89, No. 10. (2006)
    posted to nickel oxide resistance-switch volatility by mpickett on 2008-04-01 22:37:11 as read
  • 注: このページを引用する時は次のURLでどうぞ: http://www.citeulike.org/user/mpickett/author/Sugiyama

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