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mllee mbe [58 articles]

最近 mllee さんのライブラリに追加された論文の中から タグ mbe. You can also see everyone's mbe.
  • Effects of bismuth on wide-depletion-width GaInNAs solar cells
    25th North American Molecular Beam Epitaxy Conference (NAMBE), Vol. 26, No. 3. (2008), pp. 1053-1057.
    by AJ Ptak, R France, CS Jiang, RC Reedy
    posted to surfactant solar photovoltaic mbe ingaasn bismuth by mllee on 2008-07-25 15:40:45 as **
  • Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy
    Journal of Crystal Growth, Vol. 304, No. 2. (15 June 2007), pp. 402-406.
    by Ting Liu, Sandeep Chandril, AJ Ptak, D Korakakis, TH Myers
    posted to surfactant mbe gaasn bismuth by mllee on 2008-07-25 15:39:56 as **
  • Dissociation of As[sub 4] molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 1. (2002), pp. 282-285.
    by Y Tatsuoka, M Uemura, T Kitada, S Shimomura, S Hiyamizu
    posted to mixedanion mbe gaasp by mllee on 2008-07-24 22:10:16 as **
  • Composition control of GaAsP grown by molecular beam epitaxy
    Journal of Crystal Growth, Vol. 111, No. 1-4. (2 May 1991), pp. 61-64.
    by Takashi Nomura, Hiroshi Ogasawara, Masahiro Miyao, Minoru Hagino
    posted to mixedanion mbe gaasp by mllee on 2008-07-24 21:57:16 as **
  • Manifold arsenic and phosphorus effusion source for GaAsP alloys
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, No. 5. (1995), pp. 2325-2327.
    by CEC Wood, FG Johnson, SA Tabatabaei
    posted to ssmbe mixedanion mbe gaasp by mllee on 2008-07-24 21:26:18 as **
  • Multigigabit 1.3 mu m GaNAsSb/GaAs Photodetectors
    Applied Physics Letters, Vol. 93, No. 3. (2008)
    by S Fedderwitz, A Stöhr, SF Yoon, KH Tan, M Wei\ss, WK Loke, A Poloczek, S Wicaksono, D Jäger
    posted to ssmbe mbe ganassb by mllee on 2008-07-22 22:43:57 as **
  • Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots
    Journal of Applied Physics, Vol. 104, No. 2. (2008)
    by JF Chen, CH Chiang, YH Wu, L Chang, JY Chi
    posted to quantumdot mbe inassb inas by mllee on 2008-07-19 17:33:26 as **
  • [0001] composition modulations in Al[sub 0.4]Ga[sub 0.6]N layers grown by molecular beam epitaxy
    Applied Physics Letters, Vol. 92, No. 26. (2008)
    by A Wise, R Nandivada, B Strawbridge, R Carpenter, N Newman, S Mahajan
    posted to phaseseparation mbe algan by mllee on 2008-07-07 16:28:10 as **
  • Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes
    Applied Physics Letters, Vol. 85, No. 21. (2004), pp. 5031-5033.
    by Zh, Sh, JH Lee, GJ Salamo
    posted to quantumdot mbe ingaas inas by mllee on 2008-07-02 15:19:03 as **
  • Competing processes in the surface ordering of InAs islands using a subsurface island superlattice
    Applied Physics Letters, Vol. 84, No. 12. (2004), pp. 2073-2075.
    by GS Solomon
    posted to selfassembly quantumdot mbe inas by mllee on 2008-07-02 14:36:29 as ** along with 1 person yaronk
  • Growth of low-defect density In[sub 0.25]Ga[sub 0.75]As on GaAs by molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6. (2000), pp. 2611-2614.
    by GW Pickrell, KL Chang, JH Epple, KY Cheng, KC Hsieh
    posted to metamorphic mbe ingaas by mllee on 2008-06-12 20:24:35 as **
  • Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As/In[sub 0.5]Ga[sub 0.5]As/In[sub x]Al[sub 1 - x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates
    Journal of The Electrochemical Society, Vol. 153, No. 12. (2006), pp. G1005-G1010.
    by Yu S Lin, Bo Y Chen
    posted to metamorphic mbe inalas by mllee on 2008-06-09 22:36:26 as **
  • Graded In[sub x]Ga[sub 1 - x]As/GaAs 1.3 mu m wavelength light emitting diode structures grown with molecular beam epitaxy
    Journal of Applied Physics, Vol. 83, No. 1. (1998), pp. 592-599.
    by MT Bulsara, V Yang, A Thilderkvist, EA Fitzgerald, K Haüsler, K Eberl
    posted to metamorphic mbe ingaas by mllee on 2008-06-09 21:31:57 as **
  • Growth and characterization of metamorphic In[sub x](AlGa)[sub 1 - x]As/In[sub x]Ga[sub 1 - x]As high electron mobility transistor material and devices with X = 0.3--0.4
    Papers from the 18th north american conference on molecular beam epitaxy, Vol. 18, No. 3. (2000), pp. 1638-1641.
    by WE Hoke, PS Lyman, CS Whelan, JJ Mosca, A Torabi, KL Chang, KC Hsieh
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 19:05:25 as **
  • Properties of metamorphic materials and device structures on GaAs substrates
    Journal of Crystal Growth, Vol. 251, No. 1-4. (April 2003), pp. 804-810.
    by WE Hoke, TD Kennedy, A Torabi, CS Whelan, PF Marsh, RE Leoni, SM Lardizabal, Y Zhang, JH Jang, I Adesida, C Xu, KC Hsieh
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 18:57:31 as **
  • Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
    Papers from the seventeenth north american molecular beam epitaxy conference, Vol. 17, No. 3. (1999), pp. 1131-1135.
    by WE Hoke, PJ Lemonias, JJ Mosca, PS Lyman, A Torabi, PF Marsh, RA Mctaggart, SM Lardizabal, K Hetzler
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 18:32:48 as **
  • Molecular beam epitaxial growth and characteristics of 1.52 mu m metamorphic InAs quantum dot lasers on GaAs
    Vol. 26, No. 3. (2008), pp. 1153-1156.
    by Z Mi, C Wu, J Yang, P Bhattacharya
    posted to metamorphic mbe laser ingaas anneal by mllee on 2008-06-09 17:13:50 as **
  • Strong 1.3--1.6 mu m light emission from metamorphic InGaAs quantum wells on GaAs
    Applied Physics Letters, Vol. 86, No. 17. (2005)
    by T\aa I Ngring, SM Wang, QF Gu, YQ Wei, M Sadeghi, A Larsson, QX Zhao, MN Akram, J Berggren
    posted to metamorphic mbe ingaas by mllee on 2008-06-09 17:06:47 as **
  • Metamorphic growth of 1.25-1.29 [mu]m InGaAs quantum well lasers on GaAs by molecular beam epitaxy
    Journal of Crystal Growth, Vol. 301-302 (April 2007), pp. 971-974.
    by I Tångring, SM Wang, M Sadeghi, A Larsson, XD Wang
    posted to metamorphic mbe laser ingaas by mllee on 2008-06-09 17:03:08 as **
  • The suppression of misfit dislocation introduction in heavily carbon doped GaAs
    Applied Physics Letters, Vol. 70, No. 1. (1997), pp. 60-62.
    by SP Westwater, TJ Bullough, TB Joyce, BR Davidson, L Hart
    posted to strainrelaxation mbe doping by mllee on 2008-06-06 22:11:55 as **
  • Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy
    Journal of Applied Physics, Vol. 100, No. 4. (2006), 044503.
    by Pérez B Rodríguez, Mirecki J Millunchick
    posted to strainrelaxation moss mbe gaassb by mllee on 2008-06-06 20:54:59 as **
  • Leakage mechanisms and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4 mu m photodiode detectors
    Journal of Applied Physics, Vol. 103, No. 10. (2008)
    by JP Prineas, J Yager, S Seyedmohamadi, JT Olesberg
    posted to mbe gainnassb by mllee on 2008-05-30 16:04:30 as **
  • 1.55 mu m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by HY Liu, Y Qiu, CY Jin, T Walther, AG Cullis
    posted to quantumdot metamorphic mbe laser inas gaassb by mllee on 2008-05-29 18:46:57 as **
  • Growth and characteristics of ultralow threshold 1.45 mu m metamorphic InAs tunnel injection quantum dot lasers on GaAs
    Applied Physics Letters, Vol. 89, No. 15. (2006)
    by Z Mi, P Bhattacharya, J Yang
    posted to quantumdot metamorphic mbe laser ingaas inas by mllee on 2008-05-29 18:44:38 as **
  • Tilt generation in step-graded In[sub x]Ga[sub 1 - x]As metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer
    Journal of Applied Physics, Vol. 103, No. 10. (2008)
    by Shahram G Tavakoli, Oksana Hulko, David A Thompson
    posted to xrd metamorphic mbe ingaas by mllee on 2008-05-28 01:44:03 as **
  • Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation
    The 15th North American conference on molecular beam epitaxy, Vol. 14, No. 3. (1996), pp. 2322-2324.
    by CC Wamsley, MW Koch, GW Wicks
    posted to technique phosphide mbe by mllee on 2008-05-15 22:42:59 as **
  • Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 6. (1998), pp. 3041-3047.
    by WE Hoke, PJ Lemonias, A Torabi
    posted to technique phosphide mbe ingap by mllee on 2008-05-15 22:36:49 as **
  • Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, No. 5. (1999), pp. 2009-2014.
    by WE Hoke, PJ Lemonias
    posted to technique phosphide mbe by mllee on 2008-05-15 22:32:21 as **
  • Use of a valved, solid phosphorus source for the growth of Ga[sub 0.5]In[sub 0.5]P and Al[sub 0.5]In[sub 0.5]P by molecular beam epitaxy
    Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 342-344.
    by GW Wicks, MW Koch, JA Varriano, FG Johnson, CR Wie, HM Kim, P Colombo
    posted to valvedcracker mbe ingap by mllee on 2008-05-15 22:20:14 as **
  • Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
    Journal of Applied Physics, Vol. 82, No. 11. (1997), pp. 5472-5479.
    by EJ Tarsa, B Heying, XH Wu, P Fini, SP Denbaars, JS Speck
    posted to gan mbe by mllee on 2008-04-04 03:37:14 as **
  • The proximity effect of the regrowth interface on two-dimensional electron density in strained Si
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by J Liu, TM Lu, J Kim, K Lai, DC Tsui, YH Xie
    posted to mbe si by mllee on 2008-03-22 13:04:01 as **
  • GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
    Japanese Journal of Applied Physics, Vol. 40, No. 6A. (2001), pp. 3953-3959.
    by Masahiro Yoshimoto, Mitsunari Itoh, Junji Saraie, Toshiyuki Yasui, Sanghoon Ha, Tatsuro Kurobe, Hiroyuki Matsunami
    posted to gaasp gapsi led mbe by mllee on 2008-03-20 15:41:35 as **
  • The growth of metastable, heteroepitaxial films of [alpha]-Sn by metal beam epitaxy
    Journal of Crystal Growth, Vol. 54, No. 3. (September 1981), pp. 507-518.
    by RFC Farrow, DS Robertson, GM Williams, AG Cullis, GR Jones, IM Young, PNJ Dennis
    posted to epitaxialstabilization mbe tin by mllee on 2008-03-18 01:56:03 as **
  • Nitrogen-induced hindering of In incorporation in InGaAsN
    Applied Physics Letters, Vol. 88, No. 14. (2006)
    by S Rubini, G Bais, A Cristofoli, M Piccin, R Duca, C Nacci, S Modesti, E Carlino, F Martelli, A Franciosi, G Bisognin, D De Salvador, P Schiavuta, M Berti, AV Drigo
    posted to ingaasn innanticorrelation mbe phaseseparation by mllee on 2008-03-13 21:01:11 as ***
  • Strain relaxation of GaN[sub x]As[sub 1 - x] on GaAs (001) grown by molecular-beam epitaxy
    Journal of Applied Physics, Vol. 86, No. 9. (1999), pp. 5302-5304.
    by Z Pan, YT Wang, LH Li, H Wang, Z Wei, ZQ Zhou, YW Lin
    posted to gaasn mbe strainrelaxation by mllee on 2008-03-13 20:14:47 as **
  • Comparison of strain relaxation in InGaAsN and InGaAs thin films
    Applied Physics Letters, Vol. 80, No. 23. (2002), pp. 4357-4359.
    by M Adamcyk, JH Schmid, T Tiedje, A Koveshnikov, A Chahboun, V Fink, KL Kavanagh
    posted to ingaasn mbe moss strainrelaxation by mllee on 2008-03-13 20:10:41 as **
  • Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
    Journal of Electronic Materials, Vol. 27, No. 7. (7 July 1998), pp. 900-907.
    by R Sieg, S Ringel, S Ting, E Fitzgerald, R Sacks
    posted to apd gaasonge mbe offcut by mllee on 2008-03-11 19:00:32 as **
  • notes Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE
    Journal of Crystal Growth, Vol. 49, No. 1. (May 1980), pp. 132-140.
    by CT Foxon, BA Joyce, MT Norris
    posted to gaasp mbe mixedanion by mllee on 2008-03-05 16:34:35 as **
  • notes Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction
    Journal of Applied Physics, Vol. 99, No. 9. (2006)
    by April S Brown, Maria Losurdo, Pio Capezzuto, Giovanni Bruno, Terence Brown, Gary May
    posted to gaasp mbe mixedanion by mllee on 2008-03-05 16:08:07 as **
  • notes Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3. (2004), pp. 1450-1454.
    by Xiaojun Yu, Paulina S Kuo, Kai Ma, Ofer Levi, Martin M Fejer, James S Harris
    posted to gapsi mbe by mllee on 2008-03-05 02:39:25 as **
  • Rapid thermal annealing in GaN[sub x]As[sub 1 - x]/GaAs structures: Effect of nitrogen reorganization on optical properties
    Journal of Applied Physics, Vol. 91, No. 9. (2002), pp. 5902-5908.
    by L Grenouillet, Bru C Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, G Rolland, A Million
    posted to gaasn mbe phaseseparation by mllee on 2008-03-02 15:08:25 as **
  • Influence of N incorporation on In content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
    Applied Physics Letters, Vol. 89, No. 7. (2006)
    by HF Liu, N Xiang, SJ Chua
    posted to ingaasn innanticorrelation mbe phaseseparation rheed by mllee on 2008-03-02 14:42:46 as **
  • Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
    Journal of Applied Physics, Vol. 41, No. 7. (1970), pp. 2780-2786.
    by AY Cho
    posted to 111b mbe by mllee on 2008-02-28 20:50:40 as **
  • “A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy”
    Journal of Applied Physics, Vol. 69, No. 4. (1991), pp. 2219-2223.
    by KC Rajkumar, P Chen, A Madhukar
    posted to 111b gaas mbe twins by mllee on 2008-02-28 20:22:49 as **
  • Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 2. (1988), pp. 638-641.
    by K Elcess, JL Liévin, CG Fonstad
    posted to 111b gaas mbe by mllee on 2008-02-28 20:16:55 as **
  • Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
    Papers from the 18th north american conference on molecular beam epitaxy, Vol. 18, No. 3. (2000), pp. 1566-1571.
    by Yeonjoon Park, Michael J Cich, Rian Zhao, Petra Specht, Eicke R Weber, Eric Stach, Shinji Nozaki
    posted to 111b gaas mbe tem by mllee on 2008-02-28 18:06:51 as **
  • Growth of GaP on Si substrates by solid-source molecular beam epitaxy
    Journal of Crystal Growth, Vol. 227-228 (July 2001), pp. 279-283.
    by Mahdad Sadeghi, Shumin Wang
    posted to ale gapsi mbe by mllee on 2008-02-20 22:56:38 as **
  • Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates
    Journal of Crystal Growth, Vol. 187, No. 1. (15 April 1998), pp. 42-50.
    by Y Takagi, H Yonezu, K Samonji, T Tsuji, N Ohshima
    posted to gapsi mbe mee tem by mllee on 2008-02-20 22:56:00 as **
  • notes Structure, morphology, and optical properties of Ga[sub x]In[sub 1 - x]N[sub 0.05]As[sub 0.95] quantum wells: Influence of the growth mechanism
    Physical Review B (Condensed Matter and Materials Physics), Vol. 76, No. 8. (2007)
    by WM Mcgee, RS Williams, MJ Ashwin, TS Jones, E Clarke, J Zhang, S Tomic
    posted to ingaasn mbe phaseseparation spinodaldecomposition by mllee on 2008-01-23 20:00:42 as **
  • The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
    Journal of Physics: Condensed Matter, Vol. 16, No. 31. (2004), pp. S3161-S3170.
    by PR Chalker, TJ Bullough, M Gass, S Thomas, TB Joyce
    posted to gaasn ingaasn mbe stackingfaults tem by mllee on 2008-01-23 19:11:41 as **
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