An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges

@article{citeulike:2923398, abstract = {Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D), and edge doping concentration of boron/nitrogen was investigated using local density approximation and compare to the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB, in general, is smaller than that of AGNRM, of AGNRB exhibits two distinct groups, metal and semiconductor, while AGNRM displays purely semiconducting behavior. Moreover, Eg of AGNRB is highly sensitive to D, indicating a possible application in tuning Eg by varying D. Finally, edge doping of both AGNR systems reduces Eg by 11\%\–17\%/4\%\–10\% for AGNRM/AGNRB, respectively. \©2008 American Institute of Physics}, author = {Lam, Kai T. and Liang, Gengchiau }, citeulike-article-id = {2923398}, doi = {http://dx.doi.org/10.1063/1.2938058}, journal = {Applied Physics Letters}, keywords = {bilayer, dft, graphene}, number = {22}, posted-at = {2008-06-24 12:35:09}, priority = {2}, publisher = {AIP}, title = {An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges}, url = {http://dx.doi.org/10.1063/1.2938058}, volume = {92}, year = {2008} }

TY - JOUR ID - citeulike:2923398 L3 - citeulike-article-id:2923398 TI - An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges JF - Applied Physics Letters VL - 92 IS - 22 PB - AIP N2 - Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D), and edge doping concentration of boron/nitrogen was investigated using local density approximation and compare to the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB, in general, is smaller than that of AGNRM, of AGNRB exhibits two distinct groups, metal and semiconductor, while AGNRM displays purely semiconducting behavior. Moreover, Eg of AGNRB is highly sensitive to D, indicating a possible application in tuning Eg by varying D. Finally, edge doping of both AGNR systems reduces Eg by 11%–17%/4%–10% for AGNRM/AGNRB, respectively. ©2008 American Institute of Physics KW - bilayer KW - dft KW - graphene AU - Lam, Kai AU - Liang, Gengchiau PY - 2008/// UR - http://dx.doi.org/10.1063/1.2938058 ER -