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dharma library [339 articles]

最近 dharma さんのライブラリ .
  • Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate
    Solid-State Electronics, Vol. 47, No. 11. (November 2003), pp. 2081-2084.
    by Jaesun Lee, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S Flynn, George R Brandes
    posted to enhancemet hemt- by dharma on 2008-01-11 09:51:07 as **
  • Improved GaN MBE-Growth using Bismuth as a Surfactant
    posted to no-tag by dharma on 2008-01-10 08:51:45 as **
  • Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)
    Physica Scripta, Vol. T79 (1999), pp. 198-201.
    by JV Thordson, O Zsebök, TG Andersson
    posted to no-tag by dharma on 2008-01-10 08:50:14 as **
  • LP-MOCVD growth of GaN on silicon substrates--comparison between AlAs and ZnO nucleation layers
    Materials Science and Engineering B, Vol. 59, No. 1-3. (6 May 1999), pp. 29-32.
    by A Strittmatter, A Krost, V Turck, M Stra[ss]burg, D Bimberg, J Blasing, T Hempel, J Christen, B Neubauer, D Gerthsen, T Christmann, BK Meyer
    posted to lp-mocvd zno by dharma on 2008-01-10 07:59:42 as **
  • MOCVD Growth of GaN on LiAlO<SUB><FONT SIZE='-1'>2</FONT></SUB>(100) Substrates
    physica status solidi (a), Vol. 176, No. 1. (1999), pp. 589-593.
    by Ke Xu, Jun Xu, Peizhen Deng, Rongsheng Qiu, Zujie Fang
    posted to no-tag by dharma on 2008-01-10 07:49:28 as **
  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
    Jpn. J. Appl. Phys, Vol. 39 (2000), pp. L1183-L1185.
    by Armin
    posted to no-tag by dharma on 2008-01-08 10:08:25 as **
  • MOCVD growth of AlN/GaN DBR structures under various ambient conditions
    Journal of Crystal Growth, Vol. 262, No. 1-4. (15 February 2004), pp. 151-156.
    by HH Yao, CF Lin, HC Kuo, SC Wang
    posted to no-tag by dharma on 2007-12-19 10:25:27 as ** along with 1 person marsjk
  • Nobel prize recognizes GMR pioneers - Physics World - physicsworld.com
    posted to 2007 noble prize by dharma on 2007-10-10 08:47:31 as **
  • GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
    Applied Physics Letters, Vol. 67, No. 12. (1995), pp. 1686-1688.
    by Z Yang, LK Li, WI Wang
    posted to ammonia gan mbe by dharma on 2007-10-04 15:21:47 as **
  • GaN growth by MBE using a remote RF plasma source of nitrogen
    by William
    posted to gan mbe rf by dharma on 2007-10-04 15:20:18 as **
  • Fabrication of self-organized GaInNAs quantum dots by atomic H-assisted RF-molecular beam epitaxy
    Journal of Crystal Growth, Vol. 261, No. 1. (15 January 2004), pp. 11-15.
    by R Oshima, A Ohmae, Y Okada
    posted to qd rf-mbe by dharma on 2007-10-04 15:04:04 as **
  • Wide continuous tuning range of 221nm by InP / air-gap vertical-cavity filters
    Electronics Letters, Vol. 42, No. 17. (2006), pp. 974-975.
    by A Hasse, S Irmer, J Daleiden, N Dharmarasu, S Hansmann, H Hillmer
    posted to inp tunable by dharma on 2007-09-21 14:42:39 as ** along with 1 person hukrause
  • ScienceDirect - Journal of Crystal Growth : Growth of c-GaN on carbonized Si(1 0 0) surfaces
    Journal of Crystal Growth, Vol. 189-190 (June 1998), pp. 401-405.
    by Yamada
    posted to no-tag by dharma on 2007-09-04 17:09:18 as **
  • Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N[sub 2]
    Applied Physics Letters, Vol. 73, No. 10. (1998), pp. 1394-1396.
    by PR Willmott, F Antoni
    posted to pld gan si by dharma on 2007-09-04 17:01:39 as **
  • Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy
    Journal of Applied Physics, Vol. 83, No. 7. (1998), pp. 3800-3806.
    by B Yang, A Trampert, O Brandt, B Jenichen, KH Ploog
    posted to gan pa-mbe si by dharma on 2007-09-04 16:57:06 as **
  • Molecular beam epitaxial growth of GaN on (1 0 0)- and (1 1 1) Si substrates coated with a thin SiC layer
    Journal of Crystal Growth, Vol. 227-228 (July 2001), pp. 425-430.
    by M Cervantes-Contreras, M Lopez-Lopez, M Melendez-Lira, M Tamura, Y Hiroyama
    posted to gan mbe si by dharma on 2007-09-04 16:50:02 as ****
  • Study of the optical and structural properties of GaN films grown on Si substrates with a SiC layer
    Thin Solid Films, Vol. 433, No. 1-2. (2 June 2003), pp. 68-72.
    by M Cervantes-Contreras, M Lopez-Lopez, M Melendez-Lira, M Tamura, MA Vidal
    posted to gan si by dharma on 2007-09-04 16:45:21 as **
  • ScienceDirect - Materials Science and Engineering B : How to induce the epitaxial growth of gallium nitride on Si(001)
    Materials Science and Engineering B, Vol. 29, No. 1-3. (January 1995), pp. 74-77.
    by Rössnera
    posted to no-tag by dharma on 2007-09-04 16:41:28 as ****
  • Expanding horizons for nitride devices & materials
    III-Vs Review, Vol. 19, No. 1. (February 2006), pp. 25-33.
    by Alan Mills
    posted to gan news by dharma on 2007-08-29 16:27:54 as **** along with 1 person Nitrides-TL-NTU
  • Nitrides in Europe
    III-Vs Review, Vol. 17, No. 8. (November 2004), pp. 36-38.
    by Alan Mills
    posted to news by dharma on 2007-08-29 16:27:06 as **
  • Growth and characterization of GaN-based structures on SiCOI-engineered substrates
    Journal of Crystal Growth, Vol. 272, No. 1-4. (10 December 2004), pp. 500-505.
    by Y Dikme, P van Gemmern, YC Lin, A Szymakowski, H Kalisch, B Faure, C Richtarch, H Larheche, P Bove, F Letertre, JF Woitok, K Efthimiadis, RH Jansen, M Heuken
    posted to gan sicoi by dharma on 2007-08-29 16:14:13 as **
  • Picogiga's sales double
    III-Vs Review, Vol. 19, No. 1. (February 2006), 18.
    posted to news picogiga by dharma on 2007-08-29 16:06:12 as ****
  • Euronitrides II
    III-Vs Review, Vol. 18, No. 1. (February 2005), pp. 26-28.
    by Alan Mills
    posted to news by dharma on 2007-08-29 16:03:50 as **
  • Si based AlGaN/GaN HEMTS
    III-Vs Review, Vol. 18, No. 1. (February 2005), 19.
    posted to gan hemt si by dharma on 2007-08-29 16:01:46 as ****
  • AlGaN/GaN-on-Silicon from Picogiga
    III-Vs Review, Vol. 17, No. 2. (March 2004), 28.
    posted to gan picogiga si by dharma on 2007-08-29 15:59:16 as **
  • First GaN-on-insulator substrate
    III-Vs Review, Vol. 18, No. 2. (March 2005), 28.
    posted to gan soi by dharma on 2007-08-29 15:57:38 as *****
  • MBE - great box of tricks or mass production tool?
    III-Vs Review, Vol. 18, No. 7. ( 2005), 42.
    by Gail Purvis
    posted to gan mbe picogiga by dharma on 2007-08-29 15:49:37 as *****
  • Growth Kinetics of GaN in Ammonia Atmosphere
    physica status solidi (a), Vol. 176, No. 1. (1999), pp. 333-336.
    by Yu S Karpov, RA Talalaev, Yu, N Grandjean, J Massies, B Damilano
    posted to ammonia gan model by dharma on 2007-08-29 15:20:17 as ** along with 1 person vganesh
  • Quantitative Model for the MBE-Growth of Ternary Nitrides
    physica status solidi (a), Vol. 176, No. 1. (1999), pp. 301-305.
    by R Averbeck, H Riechert
    posted to gan mbe model by dharma on 2007-08-29 12:47:30 as ****
  • What Is MBE?
    posted to mbe by dharma on 2007-08-29 12:33:26 as ****
  • RHEED Studies of Group III-Nitrides Grown by MBE
    physica status solidi (a), Vol. 176, No. 1. (1999), pp. 723-726.
    by CT Foxon, CS Davis, SV Novikov, OH Hughes, TS Cheng, D Korakakis, NJ Jeffs, I Grzegory, S Porowski
    posted to gan mbe rheed by dharma on 2007-08-29 12:23:56 as *****
  • Plasma-assisted MBE growth of group-III nitrides: from basics to device applications
    pp. 189-196.
    by MA Sanchez-Garca
    posted to gan pa-mbe by dharma on 2007-08-29 12:20:56 as **
  • Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth
    Applied Physics Letters, Vol. 78, No. 7. (2001), pp. 895-897.
    by Yihwan Kim, Noad A Shapiro, Henning Feick, Robert Armitage, Eicke R Weber, Yi Yang, Franco Cerrina
    posted to gan strain by dharma on 2007-08-29 12:15:23 as **
  • ScienceDirect - Materials Science and Engineering: R: Reports : Substrates for gallium nitride epitaxy
    Materials Science and Engineering: R: Reports, Vol. 37, No. 3. (30 April 2002), pp. 61-127.
    by Liu
    posted to gan substrate by dharma on 2007-08-29 12:14:40 as **
  • ScienceDirect - Materials Science and Engineering: R: Reports : Gallium nitride bulk crystal growth processes: A review
    Materials Science and Engineering: R: Reports, Vol. 50, No. 6. (1 January 2006), pp. 167-194.
    by Annaïg
    posted to bulk gan by dharma on 2007-08-29 12:07:30 as ****
  • Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer
    Applied Physics Letters, Vol. 86, No. 18. (2005)
    by X Xu, R Armitage, Satoko Shinkai, Katsutaka Sasaki, C Kisielowski, ER Weber
    posted to gan hfn si by dharma on 2007-08-29 11:16:50 as *****
  • Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy
    Applied Physics A: Materials Science & Processing, Vol. 80, No. 8. (1 May 2005), pp. 1635-1639.
    by YH Kim, JY Lee, SH Lee, JE Oh, HS Lee
    posted to gan mbe nanorods si by dharma on 2007-08-29 11:12:20 as **
  • Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures
    Journal of Materials Science: Materials in Electronics, Vol. 14, No. 4. (1 April 2003), pp. 233-245.
    by KS Ramaiah, D Huang, MA Reshchikov, F Yun, H Morkoç, J Jasinski, Z Liliental-Weber, C Sone, SS Park, KY Lee
    posted to gan gan_template mbe mocvd by dharma on 2007-08-29 11:08:51 as ****
  • Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD
    Journal of Electronic Materials, Vol. 35, No. 10. (7 October 2006), pp. 1837-1841.
    by Shiuan-Ho Chang, Yean-Kuen Fang, Shyh-Fann Ting, Chun-Yue Lin, Shih-Fang Chen, Hon Kuan, Chin-Yung Liang
    posted to gan mocvd si by dharma on 2007-08-29 11:04:25 as ****
  • Lattice-matched HfN buffer layers for epitaxy of GaN on Si
    Applied Physics Letters, Vol. 81, No. 8. (2002), pp. 1450-1452.
    by R Armitage, Qing Yang, H Feick, J Gebauer, ER Weber, Satoko Shinkai, Katsutaka Sasaki
    posted to gan hfn mbe si by dharma on 2007-08-29 11:01:42 as *****
  • Improved Mg-doped GaN films grown over a multilayered buffer
    Applied Physics Letters, Vol. 73, No. 13. (1998), pp. 1772-1774.
    by Xiong Zhang, Soo J Chua, Peng Li, Kok B Chong, Wen Wang
    posted to gan singapore by dharma on 2007-08-28 17:35:36 as ***
  • Strain relaxation in graded InGaN/GaN epilayers grown on sapphire
    Applied Physics Letters, Vol. 83, No. 8. (2003), pp. 1545-1547.
    by TL Song, SJ Chua, EA Fitzgerald, P Chen, S Tripathy
    posted to gan sapphire singapore by dharma on 2007-08-28 17:34:28 as ****
  • Nanoscale lateral epitaxial overgrowth of GaN on Si (111)
    Applied Physics Letters, Vol. 87, No. 19. (2005)
    by KY Zang, YD Wang, SJ Chua, LS Wang
    posted to gan nano nanoepitaxy si singapore by dharma on 2007-08-28 17:33:48 as ****
  • Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)
    Applied Physics Letters, Vol. 88, No. 14. (2006)
    by KY Zang, YD Wang, SJ Chua, LS Wang, S Tripathy, CV Thompson
    posted to gan si singapore by dharma on 2007-08-28 17:33:01 as **
  • Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates
    Applied Physics Letters, Vol. 89, No. 1. (2006)
    by LS Wang, S Tripathy, BZ Wang, JH Teng, SY Chow, SJ Chua
    posted to gan nanoepitaxy si singapore by dharma on 2007-08-28 17:32:23 as ****
  • Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
    Applied Physics Letters, Vol. 90, No. 5. (2007)
    by CB Soh, H Hartono, SY Chow, SJ Chua, EA Fitzgerald
    posted to gan gan_template by dharma on 2007-08-28 17:31:27 as **
  • Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
    Applied Physics Letters, Vol. 90, No. 17. (2007)
    by H Hartono, CB Soh, SY Chow, SJ Chua, EA Fitzgerald
    posted to gan gan_template by dharma on 2007-08-28 17:30:40 as ****
  • Light Enhanced MOCVD Growth of GaN
    ECS Transactions, Vol. 3, No. 5. (2006), pp. 299-304.
    by Arturo Escobosa, Victor, Vyacheslav Elyukhin
    edited by F Ren, J Bardwell, P Chang, W Johnson, P Shen, E Stokes
    posted to gan mocvd by dharma on 2007-08-28 17:24:32 as *****
  • Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers
    physica status solidi (c), Vol. 3, No. 6. (2006), pp. 2087-2090.
    by In-Hwan Lee, AY Polyakov, NB Smirnov, AV Govorkov, AV Markov, SJ Pearton
    posted to dlts gan mocvd by dharma on 2007-08-28 17:21:18 as ****
  • Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition
    Journal of Crystal Growth, Vol. 280, No. 3-4. (1 July 2005), pp. 335-340.
    by Wu-Yih Uen, Zhen-Yu Li, Shan-Ming Lan, Sen-Mao Liao
    posted to gan mocvd si by dharma on 2007-08-28 17:20:05 as *****
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