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タグ: hfo2 [13 articles]

Recent papers classified by the tag hfo2.
  • notes Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553.
    by C Wang, VM Donnelly
    posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as read along with 1 group LTM_LETI_etching
  • notes Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 4. (2004), pp. 1552-1558.
    by Jinghao Chen, Won J Yoo, Zerlinda YL Tan, Yingqian Wang, Daniel SH Chan
    posted to cl2-o2 hbr-o2 hfalo hfo2 hfon hfsio high-k by these_morel on 2006-02-17 15:12:43 as read along with 1 group LTM_LETI_etching
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to xps plasma hfo2 fluorocarbon etching by these_morel on 2006-12-13 15:40:29 as read along with 1 group LTM_LETI_etching
  • notes Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (2005), 4 pp..
    by K Seo, R Sreenivasan, PC Mclntyre, KC Saraswat
    posted to fluorine hfo2 incorporation by these_morel on 2006-12-14 14:01:11 as read along with 1 group LTM_LETI_etching
  • notes Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443.
    by Kazuo Takahashi, Kouichi Ono
    posted to xps plasmas hfo2 fluorocarbon etching by these_morel on 2006-12-13 15:38:19 as read along with 1 group LTM_LETI_etching
  • Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40.
    by M Helot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, P Mangiagalli, T Lill
    posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as ** along with 1 group LTM_LETI_etching
  • Plasma etching of high dielectric constant materials on silicon in halogen chemistries
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 88-95.
    by Lin Sha, Jane P Chang
    posted to bcl3 cl2 hfo2 high-k zro2 by these_morel on 2006-02-21 09:44:45 as ** along with 1 group LTM_LETI_etching
  • notes Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric
    Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20.
    by Jinghao Chen, Won J Yoo, Daniel SH Chan, Dim L Kwong
    posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel on 2006-02-17 15:00:46 as read along with 1 group LTM_LETI_etching
  • Ion-enhanced chemical etching of HfO[sub 2] for integration in metal--oxide--semiconductor field effect transistors
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6. (2003), pp. 2420-2427.
    by Lin Sha, Ragesh Puthenkovilakam, You S Lin, Jane P Chang
    posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:36:28 as ** along with 1 group LTM_LETI_etching
  • notes Plasma etching of high-k and metal gate materials
    Vacuum, Vol. In Press, Corrected Proof
    by Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, Kouichi Ono
    posted to ecr hfo2 high-k metal by these_morel on 2006-02-17 15:39:06 as read along with 1 group LTM_LETI_etching
  • Etch characteristics of HfO2 films on Si substrates
    Applied Surface Science, Vol. 187, No. 1-2. (14 February 2002), pp. 75-81.
    by S Norasetthekul, PY Park, KH Baik, KP Lee, JH Shin, BS Jeong, V Shishodia, DP Norton, SJ Pearton
    posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:28:42 as ** along with 1 group LTM_LETI_etching
  • Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
    Electron Devices Meeting, 2006. IEDM '06. International (2006), pp. 1-4.
    by WJ Taylor, C Capasso, B Min, B Winstead, E Verret, K Loiko, D Gilmer, RI Hegde, J Schaeffer, J Schaeffer, E Luckowski, A Martinez, M Raymond, C Happ, DH Triyoso, S Kalpat, A Haggag, D Roan, JY Nguyen, LB La, L Hebert, J Smith, D Jovanovic, D Burnett, M Foisy, N Cave, PJ Tobin, SB Samavedam, Jr, S Venkatesan
    posted to tac metal-gate high-k hfo2 by these_morel on 2008-05-21 07:12:22 as **
  • Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning development
    Microelectronics and Reliability, Vol. 45, No. 5-6. ( 2005), pp. 1007-1011.
    by S Beckx, M Demand, S Locorotondo, K Henson, M Claes, V Paraschiv, D Shamiryan, P Jaenen, W Boullart, S Degendt
    posted to hfo2 metal-gate poly-si ruthenium tan tin by these_morel to the group LTM_LETI_etching on 2006-02-17 15:34:25 as read
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