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タグ: hbr-cl2-o2 [4 articles]

Recent papers classified by the tag hbr-cl2-o2.
  • notes Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching
    The 46th international symposium of the american vacuum society, Vol. 18, No. 4. (2000), pp. 1173-1175.
    by Shih P Lin, Chen H Ou, Szetsen Lee, Yu C Tien, Chin F Hsu
    posted to hbr-cl2-o2 poly-si rie time-delay-effect wsix by these_morel on 2006-02-28 15:09:27 as read along with 1 group LTM_LETI_etching
  • notes Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
    Vol. 23, No. 4. (2005), pp. 964-970.
    by Wan S Hwang, Jinghao Chen, Won J Yoo, Vladimir Bliznetsov
    posted to volatility tin tan optical-emission-spectroscopy nitrogen icp hfn hbr-cl2-o2 etching by these_morel on 2006-02-17 15:42:40 as read along with 1 group LTM_LETI_etching
  • Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
    Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79.
    by Mutumi Tuda, Kenji Shintani, Junji Tanimura
    posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as read along with 1 group LTM_LETI_etching
  • notes Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148.
    by G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
    posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as read along with 1 group LTM_LETI_etching
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