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タグ: apl [441 articles]

Recent papers classified by the tag apl.
  • A dictionary of APL
    SIGAPL APL Quote Quad, Vol. 18, No. 1. (September 1987), pp. 5-40.
    by Kenneth E Iverson
    posted to apl parproj pl by tov on 2007-09-13 22:36:06 as ***
  • Formalism in programming languages
    Commun. ACM, Vol. 7, No. 2. (February 1964), pp. 80-88.
    by Kenneth E Iverson
    posted to apl parproj pl by tov on 2007-09-13 22:38:24 as **
  • Nonlinear refraction in potassium gadolinium tungstate: An efficient Raman crystal and laser host
    Applied Physics Letters, Vol. 83, No. 13. (2003), pp. 2527-2529.
    by JA Dharmadhikari, AK Dharmadhikari, GR Kumar
    posted to apl kgw z by samuelpaul83 on 2008-01-18 10:30:17 as **
  • Growth of Nd:potassium gadolinium tungstate thin-film waveguides by pulsed laser deposition
    Applied Physics Letters, Vol. 76, No. 18. (2000), pp. 2490-2492.
    by PA Atanasov, RI Tomov, J Perriére, RW Eason, N Vainos, A Klini, A Zherikhin, E Millon
    posted to apl kgw thinfilms by samuelpaul83 on 2008-01-18 10:34:38 as **
  • Functional Programming with Bananas, Lenses, Envelopes and Barbed Wire
    Vol. 523 (1991), pp. 124-144.
    by Erik Meijer, Maarten Fokkinga, Ross Paterson
    edited by J Hughes
    posted to apl fold language programming by roi on 2006-05-02 20:11:28 as ** along with 27 people and 4 groups draganigajic rgrig jrw tautologico MattOConnor rahul ergodique kavabean damaru pintman croys msakai lomeo scis0000001 brothers calvins armintroy dhag Porges conal cdiggins mmarcus jimburton namin dvgb jkominek pedagand SRL SRG_at_UCD complogic Lambda the Ultimate
  • Photoluminescence method for detecting trace levels of iron in ultrapure silicon
    Applied Physics Letters, Vol. 78, No. 20. (2001), pp. 3070-3072.
    by I Broussell, VA Karasyuk, MLW Thewalt
    posted to apl by rice on 2008-05-07 07:16:28 as **
  • Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon
    Applied Physics Letters, Vol. 83, No. 7. (2003), pp. 1367-1369.
    by A Kvit, RA Yankov, G Duscher, G Rozgonyi, JM Glasko
    posted to apl by rice on 2008-05-07 07:34:13 as **
  • Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs
    Applied Physics Letters, Vol. 48, No. 1. (1986), pp. 38-40.
    by SJ Pearton, R Hull, DC Jacobson, JM Poate, JS Williams
    posted to apl by rice on 2008-05-06 17:27:58 as **
  • Implantation and transient B diffusion in Si: The source of the interstitials
    Applied Physics Letters, Vol. 65, No. 18. (1994), pp. 2305-2307.
    by DJ Eaglesham, PA Stolk, HJ Gossmann, JM Poate
    posted to apl by rice on 2008-05-07 06:45:19 as **
  • Electron trapping at the Si (111) atomic step edge
    Applied Physics Letters, Vol. 85, No. 9. (2004), pp. 1610-1612.
    by Masashi Ishii, Bruce Hamilton
    posted to apl by rice on 2008-05-07 07:47:23 as **
  • New method of measuring relaxation times in semiconductors
    Applied Physics Letters, Vol. 46, No. 8. (1985), pp. 770-772.
    by P Mukherjee, Sheik M Bahaei, HS Kwok
    posted to apl by rice on 2008-05-06 17:21:01 as **
  • Extended defect evolution in boron-implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion
    Applied Physics Letters, Vol. 56, No. 13. (1990), pp. 1254-1256.
    by YM Kim, GQ Lo, DL Kwong, AF Tasch, S Novak
    posted to apl by rice on 2008-05-07 06:34:18 as **
  • Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence
    Applied Physics Letters, Vol. 86, No. 5. (2005)
    by ER Glaser, BV Shanabrook, WE Carlos
    posted to apl by rice on 2008-05-07 08:08:03 as **
  • Optical diffraction gratings produced by laser interference structuring of amorphous germanium--nitrogen alloys
    Applied Physics Letters, Vol. 81, No. 15. (2002), pp. 2731-2733.
    by M Mulato, AR Zanatta, D Toet, IE Chambouleyron
    posted to apl by rice on 2008-05-07 07:22:43 as **
  • Photoluminescence imaging of silicon wafers
    Applied Physics Letters, Vol. 89, No. 4. (2006)
    by T Trupke, RA Bardos, MC Schubert, W Warta
    posted to apl by rice on 2008-05-07 08:43:09 as **
  • Deep-level spectroscopy in high-resistivity materials
    Applied Physics Letters, Vol. 32, No. 12. (1978), pp. 821-823.
    by Ch, M Boulou, A Mitonneau, D Bois
    posted to apl by rice on 2008-05-06 16:55:53 as **
  • Enhanced zero-order transmission of terahertz radiation pulses through very deep metallic gratings with subwavelength slits
    Applied Physics Letters, Vol. 89, No. 4. (2006)
    by Qirong Xing, Shuxin Li, Zhen Tian, Dong Liang, Ning Zhang, Liying Lang, Lu Chai, Qingyue Wang
    posted to apl by rice on 2008-05-07 08:44:42 as **
  • Ultrafast carrier trapping and slow recombination in ion-bombarded silicon on sapphire measured via THz spectroscopy
    Applied Physics Letters, Vol. 64, No. 18. (1994), pp. 2385-2387.
    by Stuart D Brorson, Jucheng Zhang, So
    posted to apl by rice on 2008-05-07 06:45:11 as **
  • Annealing of isolated amorphous zones in silicon
    Applied Physics Letters, Vol. 82, No. 12. (2003), pp. 1860-1862.
    by SE Donnelly, RC Birtcher, VM Vishnyakov, G Carter
    posted to apl by rice on 2008-05-07 07:25:39 as **
  • Negative photoconductivity in SiO[sub 2] films containing Si nanocrystals
    Applied Physics Letters, Vol. 74, No. 26. (1999), pp. 3987-3989.
    by Suk H Choi, RG Elliman
    posted to apl by rice on 2008-05-07 07:10:43 as **
  • Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features
    Applied Physics Letters, Vol. 84, No. 24. (2004), pp. 4962-4964.
    by Martin I Bragado, M Jaraiz, P Castrillo, R Pinacho, JE Rubio, J Barbolla
    posted to apl by rice on 2008-05-07 07:47:04 as **
  • Formation of B[sub i]O[sub i], B[sub i]C[sub s], and B[sub i]B[sub s]H[sub i] defects in e-irradiated or ion-implanted silicon containing boron
    Applied Physics Letters, Vol. 83, No. 4. (2003), pp. 665-667.
    by J Adey, R Jones, PR Briddon
    posted to apl by rice on 2008-05-07 07:41:09 as **
  • Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation
    Applied Physics Letters, Vol. 87, No. 3. (2005)
    by JS de Sousa, JP Leburton, VN Freire, Jr
    posted to apl by rice on 2008-05-07 08:14:20 as **
  • Time-resolved optical transmission of pulsed laser-irradiated silicon
    Applied Physics Letters, Vol. 38, No. 7. (1981), pp. 499-501.
    by MC Lee, HW Lo, A Aydinli, A Compaan
    posted to apl by rice on 2008-05-06 16:59:41 as **
  • Quantum confinement in amorphous silicon layers
    Applied Physics Letters, Vol. 71, No. 9. (1997), pp. 1189-1191.
    by G Allan, C Delerue, M Lannoo
    posted to apl by rice on 2008-05-07 06:59:45 as **
  • Defect photoluminescence from pulsed-laser-annealed ion-implanted Si
    Applied Physics Letters, Vol. 38, No. 6. (1981), pp. 464-466.
    by MS Skolnick, AG Cullis, HC Webber
    posted to apl by rice on 2008-05-06 16:59:35 as **
  • ELECTRON MICROSCOPE OBSERVATION OF LATTICE DISORDER IN ION-IMPLANTED SILICON
    Applied Physics Letters, Vol. 18, No. 6. (1971), pp. 257-259.
    by M Bertolotti, D Sette, L Stagni, G Vitali
    posted to apl by rice on 2008-05-06 16:43:04 as **
  • Beam scanning and wavelength modulation with branching waveguide stripe injection lasers
    Applied Physics Letters, Vol. 33, No. 7. (1978), pp. 616-618.
    by DR Scifres, W Streifer, RD Burnham
    posted to apl by rice on 2008-05-06 16:56:06 as **
  • Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
    Applied Physics Letters, Vol. 50, No. 1. (1987), pp. 31-33.
    by JW Lee, H Shichijo, HL Tsai, RJ Matyi
    posted to apl by rice on 2008-05-07 06:28:08 as **
  • SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE
    Applied Physics Letters, Vol. 18, No. 12. (1971), pp. 581-583.
    by EP Eernisse
    posted to apl by rice on 2008-05-06 16:44:19 as **
  • In situ investigation of transport in semiconductors: A contactless approach
    Applied Physics Letters, Vol. 47, No. 4. (1985), pp. 402-404.
    by Andrew Skumanich, Daniele Fournier, Claude A Boccara, Nabil M Amer
    posted to apl by rice on 2008-05-06 17:23:30 as **
  • cw laser-annealing behavior of Se[sup + ]-implanted InP investigated by ellipsometry
    Applied Physics Letters, Vol. 43, No. 4. (1983), pp. 375-377.
    by M Mizuta, JL Merz
    posted to apl by rice on 2008-05-06 17:17:02 as **
  • Optical properties of AlN and GaN in elevated temperatures
    Applied Physics Letters, Vol. 85, No. 16. (2004), pp. 3489-3491.
    by KB Nam, J Li, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 07:53:03 as **
  • Visualization of electrons and holes localized in gate thin film of metal SiO[sub 2]--Si[sub 3]N[sub 4]--SiO[sub 2] semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
    Applied Physics Letters, Vol. 86, No. 6. (2005)
    by Koichiro Honda, Sunao Hashimoto, Yasuo Cho
    posted to apl by rice on 2008-05-07 08:08:09 as **
  • Simplified evaluation method for light-biased effective lifetime measurements
    Applied Physics Letters, Vol. 71, No. 13. (1997), pp. 1795-1797.
    by FM Schuurmans, A Schönecker, AR Burgers, WC Sinke
    posted to apl by rice on 2008-05-07 06:59:49 as **
  • Dynamics and second-order nonlinear optical susceptibility of photoexcited carriers at Si(111) interfaces
    Applied Physics Letters, Vol. 83, No. 12. (2003), pp. 2357-2359.
    by D Bodlaki, E Borguet
    posted to apl by rice on 2008-05-07 07:35:07 as **
  • Infrared absorption in silicon at elevated temperatures
    Applied Physics Letters, Vol. 69, No. 15. (1996), pp. 2190-2192.
    by H Rogne, PJ Timans, H Ahmed
    posted to apl by rice on 2008-05-07 06:51:01 as **
  • Stress measurements using ultraviolet micro-Raman spectroscopy
    Applied Physics Letters, Vol. 75, No. 16. (1999), pp. 2450-2451.
    by KF Dombrowski, I De Wolf, B Dietrich
    posted to apl by rice on 2008-05-07 07:11:05 as **
  • Identification of diffusion species in V-SiO[sub 2] reactions
    Applied Physics Letters, Vol. 33, No. 1. (1978), pp. 83-85.
    by WK Chu, KN Tu
    posted to apl by rice on 2008-05-06 16:56:08 as **
  • Subgap absorption spectra of ion-implanted Si and GaAs layers
    Applied Physics Letters, Vol. 55, No. 26. (1989), pp. 2745-2747.
    by L Luciani, M Marinelli, U Zammit, R Pizzoferrato, F Scudieri, S Martellucci
    posted to apl by rice on 2008-05-07 06:34:13 as **
  • Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy
    Applied Physics Letters, Vol. 88, No. 26. (2006)
    by N Nepal, KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 08:42:56 as **
  • Characterization of multiple Si/SiO[sub 2] interfaces in silicon-on-insulator materials via second-harmonic generation
    Applied Physics Letters, Vol. 85, No. 15. (2004), pp. 3095-3097.
    by B Jun, YV White, RD Schrimpf, DM Fleetwood, F Brunier, N Bresson, S Cristoloveanu, NH Tolk
    posted to apl by rice on 2008-05-07 07:53:01 as **
  • Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance
    Applied Physics Letters, Vol. 86, No. 9. (2005)
    by R Kudrawiec, P Sitarek, J Misiewicz, SR Bank, HB Yuen, MA Wistey, Jr
    posted to apl by rice on 2008-05-07 08:08:13 as **
  • Grain growth during transient annealing of As-implanted polycrystalline silicon films
    Applied Physics Letters, Vol. 45, No. 7. (1984), pp. 778-780.
    by SJ Krause, SR Wilson, WM Paulson, RB Gregory
    posted to apl by rice on 2008-05-06 17:20:52 as **
  • Strong near-infrared photoluminescence and absorption from Si/Si[sub 1 - x]Ge[sub x] type-II multiple quantum wells on bulk crystal SiGe substrates
    Applied Physics Letters, Vol. 83, No. 14. (2003), pp. 2790-2792.
    by SR Sheng, NL Rowell, SP Mcalister
    posted to apl by rice on 2008-05-07 07:34:22 as **
  • Phase change observation in reflection multilayers by total electron yield and reflection spectra
    Applied Physics Letters, Vol. 89, No. 2. (2006)
    by Takeo Ejima, Tetsuo Harada, Atsushi Yamazaki
    posted to apl by rice on 2008-05-07 08:43:03 as **
  • Free-carrier and temperature effects in amorphous silicon thin films
    Applied Physics Letters, Vol. 53, No. 10. (1988), pp. 880-882.
    by C Tanguy, D Hulin, A Mourchid, PM Fauchet, S Wagner
    posted to apl by rice on 2008-05-07 06:31:33 as **
  • Ellipsometric spectra of silicon-on-insulator wafers
    Applied Physics Letters, Vol. 52, No. 13. (1988), pp. 1050-1052.
    by Zhongning Liang, Dang Mo
    posted to apl by rice on 2008-05-07 06:30:54 as **
  • Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
    Applied Physics Letters, Vol. 50, No. 7. (1987), pp. 416-418.
    by AE Michel, W Rausch, PA Ronsheim, RH Kastl
    posted to apl by rice on 2008-05-07 06:28:09 as **
  • Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering
    Applied Physics Letters, Vol. 85, No. 21. (2004), pp. 4905-4907.
    by Patrick A Grandt, Aureus E Griffith, MO Manasreh, DJ Friedman, S Dogan, D Johnstone
    posted to apl by rice on 2008-06-30 16:39:31 as **
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