Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography

@inproceedings{citeulike:1203023, abstract = {Current semiconductor technology requires optical lithography to image feature sizes smaller than the exposure tool wavelength. In order to achieve this subwavelength imaging, some form of optical resolution-enhancement technology is required, with phase-shift methods offering the greatest potential enhancement. Major impediments to the wide-scale adoption of this technology have included mask cost, inspectability/repair, and turnaround time. The correction of optical proximity effects, which are typically large in phase-shift techniques, have also been an important issue. In this work, we propose a new type of phase-shift approach utilizing gratings of regular arrays and trim exposures. This method makes use of multiple-exposure phase-shift imaging of dense-only features. Proximity effects can be nearly eliminated along with the complex optical proximity corrections typically required on the mask. The simple phase-shift masters can also be reused for multiple designs, thereby addressing cost and turnaround time issues. \©2001 American Vacuum Society.}, author = {Fritze, M. and Tyrrell, B. and Astolfi, D. and Yost, D. and Davis, P. and Wheeler, B. and Mallen, R. and Jarmolowicz, J. and Cann, S. and Chan, D. and Rhyins, P. and Carney, C. and Ferri, J. and Blachowicz, B. A. }, citeulike-article-id = {1203023}, doi = {10.1116/1.1408950}, journal = {The 45th international conference on electron, ion, and photon beam technology and nanofabrication}, keywords = {6781, lithography, optical, subresolution}, number = {6}, pages = {2366--2370}, posted-at = {2007-04-02 16:45:49}, priority = {0}, publisher = {AVS}, title = {Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal\&id=JVTBD9000019000006002366000001\&idtype=cvips\&gifs=yes}, volume = {19}, year = {2001} }

TY - CONF ID - citeulike:1203023 L3 - citeulike-article-id:1203023 TI - Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography JF - The 45th international conference on electron, ion, and photon beam technology and nanofabrication VL - 19 IS - 6 SP - 2366 EP - 2370 PB - AVS N2 - Current semiconductor technology requires optical lithography to image feature sizes smaller than the exposure tool wavelength. In order to achieve this subwavelength imaging, some form of optical resolution-enhancement technology is required, with phase-shift methods offering the greatest potential enhancement. Major impediments to the wide-scale adoption of this technology have included mask cost, inspectability/repair, and turnaround time. The correction of optical proximity effects, which are typically large in phase-shift techniques, have also been an important issue. In this work, we propose a new type of phase-shift approach utilizing gratings of regular arrays and trim exposures. This method makes use of multiple-exposure phase-shift imaging of dense-only features. Proximity effects can be nearly eliminated along with the complex optical proximity corrections typically required on the mask. The simple phase-shift masters can also be reused for multiple designs, thereby addressing cost and turnaround time issues. ©2001 American Vacuum Society. KW - 6781 KW - lithography KW - optical KW - subresolution AU - Fritze, M AU - Tyrrell, B AU - Astolfi, D AU - Yost, D AU - Davis, P AU - Wheeler, B AU - Mallen, R AU - Jarmolowicz, J AU - Cann, S AU - Chan, D AU - Rhyins, P AU - Carney, C AU - Ferri, J AU - Blachowicz, BA PY - 2001/// UR - http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000019000006002366000001&idtype=cvips&gifs=yes ER -